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Diodes Incorporated
DMN3024LK3
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Note 3)
Symbol
V DSS
V GS
Value
30
± 20
14.4
Unit
V
V
Continuous Drain current
V GS = 10V
T A =70 ° C (Note 3)
I D
12.0
A
(Note 2)
9.78
Pulsed Drain current
V GS = 10V
(Note 4)
I DM
46.5
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
I S
I SM
12
46.5
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Note 2)
Symbol
Value
4.1
32.5
Unit
Power dissipation
Linear derating factor
(Note 3)
P D
8.9
71.4
W
mW/ ° C
(Note 5)
(Note 2)
2.17
17.4
30.8
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 3)
(Note 5)
(Note 6)
R θ JA
R θ JL
T J , T STG
14.0
57.6
2.24
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN3024LK3
Document Revision: 1
2 of 8
www.diodes.com
June 2009
? Diodes Incorporated
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